Description

VNS1NV04DPT-R
N-Channel Enhancement Mode Vertical DMOS FET
The VNS1NV04DPT-R is a high performance, low on-resistance N-Channel power MOSFET.

Key Features:

1. Low on-resistance
2. High switching speed
3. Low gate charge
4. Avalanche rated
5. 100% UIS tested

Absolute Maximum Ratings:

1. Drain-Source Voltage (Vds): 30V
2. Gate-Source Voltage (Vgs): ±12V
3. Continuous Drain Current (Id): 30A
4. Pulsed Drain Current (Idm): 90A
5. Maximum Power Dissipation (Pd): 2W
6. Operating Junction Temperature (Tj): -55 to 150°C
7. Storage Temperature (Tstg): -55 to 150°C

Thermal Characteristics:

1. Junction-to-Case Thermal Resistance (Rthjc): 40°C/W
2. Junction-to-Ambient Thermal Resistance (Rthja): 125°C/W

Electrical Characteristics:

1. On-State Resistance (Rds): 12mΩ
2. Gate Threshold Voltage (Vgs(th)): 1V
3. Gate Source Leakage Current (Igs): ±100nA
4. Drain-Source Breakdown Voltage (Vds): 30V
5. Static Drain-Source On-State Resistance (Rds): 12mΩ

Package Information:

1. Package Type: TO-252 (DPAK)
2. Number of Pins: 3
3. Weight: 1.5g

Applications:

1. DC-DC converters
2. Motor control
3. Power management
4. Battery management
5. Automotive applications

Note: For the most up-to-date information, please consult the manufacturer’s datasheet.