Description

VNN7NV04PTR-E-ST

Description

The VNN7NV04PTR-E-ST is a high-performance, high-reliability N-Channel Power MOSFET designed for a wide range of applications, including automotive, industrial, and consumer electronics. This device exhibits excellent switching characteristics, low on-resistance, and high avalanche energy.

Key Features

• High Drain Current: 200 A
• High Drain-Source Voltage: 40 V
• Low On-Resistance: 1.8 mΩ (typ.)
• High Avalanche Energy: 680 mJ
• TO-247 Package: Suitable for high-power applications

Electrical Characteristics

Absolute Maximum Ratings

• Drain-Source Voltage: 40 V
• Gate-Source Voltage: ±20 V
• Drain Current: 200 A
• Power Dissipation: 250 W
• Junction Temperature: 175 °C
• Storage Temperature: -55 to 150 °C

Thermal Characteristics

• Junction-to-Case Thermal Resistance: 0.5 °C/W
• Case-to-Sink Thermal Resistance: 0.1 °C/W

Electrical Characteristics (at Tj = 25 °C)

• On-Resistance: 1.8 mΩ (typ.)
• Threshold Voltage: 2.5 V (typ.)
• Gate Charge: 110 nC (typ.)

Package and Ordering Information

• Package: TO-247
• Weight: 10 g (typ.)
• Ordering Code: VNN7NV04PTR-E-ST

Note: All parameters are subject to change without notice.