Description
VNN1NV04PTR-E ST
Product Description
The VNN1NV04PTR-E ST is a high-performance, N-channel MOSFET device designed for a wide range of applications. This device features a low on-resistance and high switching speeds, making it suitable for use in power management, motor control, and other high-power applications.
Key Features
- Low on-resistance: 4.5 mΩ (typical) at VGS = 10 V
- High switching speeds: 15 ns (typical) turn-on time, 25 ns (typical) turn-off time
- High current capability: 190 A (DC) at VGS = 10 V
- Low gate charge: 110 nC (typical)
- High avalanche energy: 420 μJ (typical)
Electrical Characteristics
- Drain-source voltage (VDS): 40 V
- Gate-source voltage (VGS): ±20 V
- Drain current (ID): 190 A (DC) at VGS = 10 V
- On-resistance (RDS(on)): 4.5 mΩ (typical) at VGS = 10 V
- Threshold voltage (VTH): 1.5 V (typical)
- Input capacitance (Ciss): 3500 pF (typical)
- Output capacitance (Coss): 1000 pF (typical)
- Reverse transfer capacitance (Crss): 50 pF (typical)
Thermal Characteristics
- Junction temperature (TJ): 150°C
- Storage temperature (TSTG): -55°C to 150°C
- Thermal resistance, junction-to-case (RthJC): 0.25°C/W
- Thermal resistance, junction-to-ambient (RthJA): 62.5°C/W
Package Information
- Package type: TO-220
- Package dimensions: 10.28 mm x 4.78 mm x 9.40 mm
- Lead-free and RoHS compliant
Applications
- Power management
- Motor control
- DC-DC conversion
- Switch-mode power supplies
- Battery management systems
Ordering Information
- Part number: VNN1NV04PTR-E ST
- Package type: TO-220
- Quantity: please contact us for pricing and availability information.