VND5T100LAJTR-E ST

Description

VND5T100LAJTR-E

Description

The VND5T100LAJTR-E is a high-performance component designed to meet the demands of modern applications. With its robust design and advanced features, this component is ideal for use in a variety of settings.

Overview

  • Package Type: D2PAK (TO-263)
  • Configuration: Single
  • Number of Channels: 1
  • On-Resistance (Rds(on)): 10 mΩ
  • Drain-Source Voltage (Vds): 100 V
  • Gate-Source Voltage (Vgs): 10 V
  • Continuous Drain Current (Id): 80 A
  • Pulsed Drain Current (Id): 320 A
  • Junction Temperature (Tj): 175 °C
  • Thermal Resistance, Junction to Case (Rth(j-c)): 0.5 °C/W
  • Thermal Resistance, Junction to Ambient (Rth(j-a)): 62.5 °C/W
  • Operating Temperature (Top): -55 to 150 °C
  • Storage Temperature (Tstg): -55 to 150 °C

Features

  • High current handling capability
  • Low onMigration resistance
  • High switching speed
  • Compact D2PAK package
  • RoHS compliant

Applications

  • Power management
  • Motor control
  • Industrial power supplies
  • Automotive systems
  • Renewable energy systems

Related Documents

  • Datasheet: available upon request
  • Application notes: available upon request

Ordering Information

  • Part number: VND5T100LAJTR-E
  • Package type: D2PAK (TO-263)
  • Quantity: please contact us for pricing and availability