Description

VND5T100AJTR-E

Description

The VND5T100AJTR-E is a high-performance N-Channel MOSFET designed for a wide range of applications. With its advanced technology and robust construction, this device is suitable for use in various fields, including automotive, industrial, and consumer electronics.

Features

• High Drain Current: 100 A
• Low On-Resistance: 1.5 mΩ
• High Voltage Rating: 30 V
• TO-252 Package: Suitable for surface mount assembly
• RoHS Compliant: Environmentally friendly

Specifications

Electrical Characteristics

• Drain-Source Voltage (Vds): 30 V
• Gate-Source Voltage (Vgs): ±20 V
• Drain Current (Id): 100 A
• On-Resistance (Rds(on)): 1.5 mΩ
• Threshold Voltage (Vth): 1.5 V

Thermal Characteristics

• Junction-to-Case Thermal Resistance (Rth(j-c)): 0.5 °C/W
• Junction-to-Ambient Thermal Resistance (Rth(j-a)): 62.5 °C/W

Package Characteristics

• Package Type: TO-252
• Package Dimensions: 6.21 x 5.15 mm
• Weight: 1.3 g

Applications

• Automotive: Suitable for use in automotive applications, such as motor control and power management
• Industrial: Ideal for use in industrial applications, including power supplies and motor control
• Consumer Electronics: Suitable for use in consumer electronics, such as notebooks and desktop computers

Ordering Information

• Part Number: VND5T100AJTR-E
• Package: TO-252
• Quantity: Please contact us for pricing and availability information