Description

VND5T050AKTR-E

Overview

The VND5T050AKTR-E is a high-performance N-Channel MOSFET designed for a wide range of applications. With its advanced technology and robust construction, this device offers excellent electrical and thermal characteristics.

Features

• High Drain Current: 180 A
• Low On-Resistance: 1.5 mΩ
• High Avalanche Energy: 560 mJ
• Operating Temperature Range: -40°C to 150°C
• RoHS Compliance: Yes
• Package: TO-247AC

Electrical Characteristics

• Drain-Source Voltage (VDS): 50 V
• Gate-Source Voltage (VGS): ±20 V
• Threshold Voltage (VTH): 2.5 V
• On-Resistance (RDS(on)): 1.5 mΩ
• Drain Current (ID): 180 A
• Pulsed Drain Current (IDP): 360 A
• Diode Forward Voltage (VSD): 1.2 V
• Total Gate Charge (QG): 110 nC

Thermal Characteristics

• Junction-to-Case Thermal Resistance (RthJC): 0.35°C/W
• Case-to-Sink Thermal Resistance (RthCS): 0.1°C/W
• Junction-to-Ambient Thermal Resistance (RthJA): 62°C/W

Mechanical Characteristics

• Package Type: TO-247AC
• Weight: 6.5 g
• Mounting Torque: 0.8 Nm

Applications

• Power Supplies: DC-DC converters, switching power supplies
• Motor Control: Motor drives, servo drives
• Industrial Automation: Inverters, power conditioners
• Renewable Energy: Solar, wind power systems

Ordering Information

• Part Number: VND5T050AKTR-E
• Package: TO-247AC
• Quantity: Please contact us for availability and pricing information.