TS3USB221AQRSERQ1 TI
Available |
TS3USB221AQRSERQ1 TI
• Qualified for Automotive Applications
• AEC-Q100 Qualified With the Following Results:
– Device Temperature Grade 1: –40°C to 125°C Ambient Operating Temperature Range
– Device HBM ESD Classification Level H2
– Device CDM ESD Classification Level C5
• VCC Operation at 2.5 V to 3.3 V
• VI/O Accepts Signals Up to 5.5 V
• 1.8-V Compatible Control-Pin Inputs
• Low-Power Mode When OE Is Disabled (1 µA)
• rON = 16 Ω Maximum
• ΔrON = 0.2 Ω Typical
• Cio(on) = 6 pF Typical
• Low Power Consumption (30 µA Maximum)
• High Bandwidth (900 MHz Typical)
• ESD Performance Tested Per JESD 22
– 7000-V Human-Body Model (A114-B, Class II)
– 1000-V Charged-Device Model (C101)
• ESD Performance I/O to GND Per JESD 22 – 12-kV Human-Body Model
• Qualified for Automotive Applications
• AEC-Q100 Qualified With the Following Results:
– Device Temperature Grade 1: –40°C to 125°C Ambient Operating Temperature Range
– Device HBM ESD Classification Level H2
– Device CDM ESD Classification Level C5
• VCC Operation at 2.5 V to 3.3 V
• VI/O Accepts Signals Up to 5.5 V
• 1.8-V Compatible Control-Pin Inputs
• Low-Power Mode When OE Is Disabled (1 µA)
• rON = 16 Ω Maximum
• ΔrON = 0.2 Ω Typical
• Cio(on) = 6 pF Typical
• Low Power Consumption (30 µA Maximum)
• High Bandwidth (900 MHz Typical)
• ESD Performance Tested Per JESD 22
– 7000-V Human-Body Model (A114-B, Class II)
– 1000-V Charged-Device Model (C101)
• ESD Performance I/O to GND Per JESD 22 – 12-kV Human-Body Model
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