TPS65150QPWPRQ1 TI
Available
TPS65150QPWPRQ1 TI
1 Features 1• AEC-Q100 Qualified: – Device Temperature Grade 1: –40°C to 125°C Junction Temperature – Device HBM ESD Classification According to AEC - Q100-002 – Device CDM ESD Classification According to AEC - Q100-011 • Input Voltage Range: 1.8 V to 6 V • V(VS) Boost Converter – Up to 15 V Output Voltage – < 1% Output Voltage Accuracy – 2-A Switch Current Limit • V(VGH) Positive Regulated Charge Pump Driver – Up to 30 V Output Voltage – Gate Voltage Shaping • V(VGL) Negative Regulated Charge Pump Driver – Down to –15 V Output Voltage • Integrated VCOM Buffer • Adjustable Power On Sequencing – Gate Drive Signal for External Isolation MOSFET for V(VS) • Protection Features – Out-of-Regulation Protection – Over-voltage Protection – Adjustable Fault Detection Timing – Thermal Shutdown • 24-Pin TSSOP Package with Exposed Thermal Pad
1 Features 1• AEC-Q100 Qualified: – Device Temperature Grade 1: –40°C to 125°C Junction Temperature – Device HBM ESD Classification According to AEC - Q100-002 – Device CDM ESD Classification According to AEC - Q100-011 • Input Voltage Range: 1.8 V to 6 V • V(VS) Boost Converter – Up to 15 V Output Voltage – < 1% Output Voltage Accuracy – 2-A Switch Current Limit • V(VGH) Positive Regulated Charge Pump Driver – Up to 30 V Output Voltage – Gate Voltage Shaping • V(VGL) Negative Regulated Charge Pump Driver – Down to –15 V Output Voltage • Integrated VCOM Buffer • Adjustable Power On Sequencing – Gate Drive Signal for External Isolation MOSFET for V(VS) • Protection Features – Out-of-Regulation Protection – Over-voltage Protection – Adjustable Fault Detection Timing – Thermal Shutdown • 24-Pin TSSOP Package with Exposed Thermal Pad
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