Description

SZMMSZ4704T1G ON Semiconductor N-Channel MOSFET

Overview
The SZMMSZ4704T1G is an N-Channel MOSFET developed by ON Semiconductor. This device is designed to provide low on-resistance and high current handling capabilities, making it suitable for a wide range of applications.

Key Features

• N-Channel MOSFET
• Low On-Resistance: 0.04 ohms
• High Current Handling: 36 A
• Breakdown Voltage: 30 V
• Gate-Source Voltage: ±20 V
• Operating Temperature Range: -55°C to 150°C

Parameters

• VDS (Drain-Source Voltage): 30 V
• VGS (Gate-Source Voltage): ±20 V
• ID (Drain Current): 36 A
• RDS(on) (On-Resistance): 0.04 ohms
• PD (Power Dissipation): 2.5 W
• TJ (Junction Temperature): 150°C
• TA (Ambient Temperature): 55°C

Applications
The SZMMSZ4704T1G is suitable for various applications, including:

• DC-DC converters
• Motor control
• Power management
• Switching power supplies
• Battery management systems

Packaging
The SZMMSZ4704T1G is available in a TO-251 (DPAK) package, which provides a compact and thermally efficient design.

Documentation
For more information, please refer to the SZMMSZ4704T1G datasheet and other relevant documentation available from ON Semiconductor.

Ordering Information
To order the SZMMSZ4704T1G, please contact an authorized distributor or ON Semiconductor representative.