Description
STD2N62K3-ST
N-Channel Enhanced Mode MOSFET
Features
- High switching speed
- Low gate charge
- High avalanche energy
- 175°C operating temperature
Applications
- Synchronous rectification
- Switching applications
Absolute Maximum Ratings
| Symbol | Parameter | Value | Unit |
|---|---|---|---|
| VDS | Drain-Source Voltage | 600 | V |
| VGS | Gate-Source Voltage | ±20 | V |
| ID | Drain Current | 2.4 | A |
| IDM | Pulsed Drain Current | 7.5 | A |
| PD | Total Power Dissipation | 35 | W |
Thermal Characteristics
| Symbol | Parameter | Value | Unit |
|---|---|---|---|
| Rth(j-a) | Junction to Ambient | 62 | °C/W |
| Rth(j-c) | Junction to Case | 10 | °C/W |
Electrical Characteristics
| Symbol | Parameter | Test Conditions | Value | Unit |
|---|---|---|---|---|
| VGS(th) | Gate Threshold Voltage | VDS=VGS, ID=250µA | 0.5-1.2 | V |
| IDSS | Zero Gate Voltage Drain Current | VDS=600V, VGS=0 | 1 | µA |
| RDS(on) | Static Drain-Source On Resistance | VGS=10V, ID=1.2A | 0.55 | Ω |
| Qg | Total Gate Charge | VGS=10V | 21 | nC |
| Qgd | Gate-Drain Charge | VGS=10V, VDS=480V | 4.5 | nC |
Package
- STMicroelectronics TO-220FPak package
- Package type: through-hole
- Number of pins: 3
Description
The STD2N62K3-ST is an N-Channel Enhanced Mode MOSFET, designed for high switching speed and low gate charge applications. It is suitable for synchronous rectification and switching applications where high efficiency and reliability are required. The device is housed in the TO-220FPak package, ensuring low thermal resistance and high power dissipation capability. With its robust design, the STD2N62K3-ST MOSFET is capable of operating at a junction temperature of up to 175°C, making it suitable for demanding applications.