Description

STB120N4F6 ST

Description
The STB120N4F6 ST is a high-performance power MOSFET designed for use in a variety of applications, including power supplies, motor control, and power conversion systems.

Features

• High drain current: 120 A
• Low on-resistance: 4.6 mΩ
• High voltage rating: 30 V
• Fast switching times: 15 ns (turn-on), 30 ns (turn-off)
• Low gate charge: 110 nC
• High thermal conductivity: 0.62 W/K

Characteristics

• Package type: TO-220
• Junction temperature: -55 to 150 °C
• Storage temperature: -55 to 150 °C
• Operating frequency: up to 500 kHz

Electrical Characteristics

• Drain-source voltage (VDS): 30 V
• Gate-source voltage (VGS): ±20 V
• Drain current (ID): 120 A
• On-resistance (RDS(on)): 4.6 mΩ
• Threshold voltage (VTH): 1.5 V

Thermal Characteristics

• Junction-to-case thermal resistance (RθJC): 0.62 W/K
• Junction-to-ambient thermal resistance (RθJA): 62.5 W/K

Mechanical Characteristics

• Package dimensions: 10.28 x 4.83 x 15.75 mm
• Lead diameter: 0.55 mm
• Lead pitch: 2.54 mm

Applications

• Power supplies
• Motor control
• Power conversion systems
• DC-DC converters
• Switching regulators

Ordering Information
The STB120N4F6 ST is available in a TO-220 package and can be ordered as follows:

• Part number: STB120N4F6 ST
• Package type: TO-220

Note: All parameters are subject to change without notice. Please verify the specifications with the manufacturer before using the device.