Description
SPW24N60CFD
Description
The SPW24N60CFD is a high-performance, N-channel power MOSFET designed for high-frequency applications. This device features a low on-resistance, high switching speed, and a robust body diode, making it suitable for a wide range of power management and conversion applications.
Key Features
- High Drain Current: 24 A
- Low On-Resistance: 0.13 Ω (typical)
- High Switching Speed: t(r) = 12 ns (typical), t(f) = 23 ns (typical)
- Robust Body Diode: 20 A (maximum)
- High Junction Temperature: 175°C (maximum)
- Compact TO-252 Package: 6.15 mm x 5.70 mm x 2.30 mm
Electrical Characteristics
Absolute Maximum Ratings
Parameter | Symbol | Value | Unit |
---|---|---|---|
Drain Current | I_D | 24 | A |
Drain-Source Voltage | V_DS | 600 | V |
Gate-Source Voltage | V_GS | ±20 | V |
Junction Temperature | T_J | 175 | °C |
Thermal Characteristics
Parameter | Symbol | Value | Unit |
---|---|---|---|
Junction-to-Case Thermal Resistance | R_thJC | 0.55 | °C/W |
Junction-to-Ambient Thermal Resistance | R_thJA | 62 | °C/W |
Switching Characteristics
Parameter | Symbol | Value | Unit |
---|---|---|---|
Turn-On Resistance | R_DS(on) | 0.13 | Ω |
Rise Time | t_r | 12 | ns |
Fall Time | t_f | 23 | ns |
Applications
The SPW24N60CFD is suitable for a wide range of high-frequency applications, including:
- Power supplies
- Motor control
- Power management
- High-frequency inverters
- Switching applications
Package
The SPW24N60CFD is packaged in a compact TO-252 package, with the following dimensions:
- 6.15 mm x 5.70 mm x 2.30 mm
Ordering Information
For ordering information, please contact our sales department or visit our website.
Disclaimer
All specifications and parameters are subject to change without notice.