Description

SPW20N60S5 – 600V, 20A, N-Channel MOSFET

Overview
The SPW20N60S5 is a high-performance, N-Channel MOSFET designed for a wide range of applications, including power supplies, motor control, and lighting systems. This device features a high breakdown voltage of 600V and a continuous drain current of 20A.

Key Features

• High Breakdown Voltage: 600V
• Continuous Drain Current: 20A
• N-Channel MOSFET: Ideal for high-power applications
• Low On-Resistance: Minimizes power losses and heat generation
• High Switching Speed: Suitable for high-frequency applications

Electrical Characteristics

• Drain-Source Voltage (Vds): 600V
• Gate-Source Voltage (Vgs): ±20V
• Continuous Drain Current (Id): 20A
• Pulse Drain Current (Idm): 40A
• On-Resistance (Rds(on)): 0.220Ω
• Threshold Voltage (Vth): 2.5V
• Input Capacitance (Ciss): 1100pF
• Output Capacitance (Coss): 220pF
• Reverse Transfer Capacitance (Crss): 30pF

Thermal Characteristics

• Junction-to-Case Thermal Resistance (Rth(j-c)): 0.65°C/W
• Case-to-Sink Thermal Resistance (Rth(c-s)): 0.15°C/W
• Junction Temperature (Tj): -40°C to 150°C
• Storage Temperature (Tstg): -40°C to 150°C

Package and Weight

• Package Type: TO-247
• Package Weight: 7.5g
• Dimensions: 15.7mm x 9.8mm x 4.4mm

Applications

• Power Supplies: Suitable for high-power supply applications
• Motor Control: Ideal for motor control and drive systems
• Lighting Systems: Suitable for high-power lighting systems
• Other Applications: Can be used in a wide range of other high-power applications