Description
SPU02N60C3
Product Overview
The SPU02N60C3 is a highly reliable and efficient N-channel enhancement mode power MOSFET, designed for use in a wide range of applications, including switching power supplies, motor control, and high-frequency power conversion systems.
Key Features
- High Drain Current: 20 A
- Low On-Resistance: 0.028 Ω
- High Switching Speed: 34 ns
- Low Gate Charge: 21 nC
- High Avalanche Energy: 520 mJ
Electrical Characteristics
Absolute Maximum Ratings
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-Source Voltage | Vds | 600 | V |
| Gate-Source Voltage | Vgs | ±30 | V |
| Drain Current | Id | 20 | A |
| Avalanche Energy | Eas | 520 | mJ |
Thermal Characteristics
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Junction Temperature | Tj | 150 | °C |
| Storage Temperature | Tstg | -40 to 150 | °C |
| Thermal Resistance, Junction-to-Case | Rthjc | 0.85 | °C/W |
On-State Characteristics
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| On-Resistance | Rds(on) | 0.028 | Ω |
| Static Drain-Source On-Resistance | Rds/static | 0.032 | Ω |
Switching Characteristics
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Turn-On Time | Ton | 14 | ns |
| Turn-Off Time | Toff | 20 | ns |
| Rise Time | Tr | 10 | ns |
| Fall Time | Tf | 10 | ns |
Gate Charge Characteristics
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Total Gate Charge | Qg | 21 | nC |
| Gate-Source Charge | Qgs | 5.5 | nC |
| Gate-Drain Charge | Qgd | 11 | nC |
Package and Pinout
The SPU02N60C3 is available in a TO-220 package with the following pinout:
- Pin 1: Gate
- Pin 2: Drain
- Pin 3: Source
Ordering Information
The SPU02N60C3 is available for immediate shipment. To place an order, please contact our sales department.
Note: All parameters are subject to change without notice. Please verify with the manufacturer for the most up-to-date information.