Description
SPA11N80C3XKSA1 Infineon
Product Overview
The SPA11N80C3XKSA1 is a high-performance power transistor from Infineon, designed for use in a variety of applications, including automotive and industrial systems. This device is built using advanced technology to provide high reliability, efficiency, and durability.
Key Features
- Package Type: TO-247
- Drain-Source Voltage (Vds): 800 V
- Gate-Source Voltage (Vgs): ±30 V
- Continuous Drain Current (Id): 11 A
- Pulsed Drain Current (Id): 44 A
- Power Dissipation (Pd): 200 W
- Junction Temperature (Tj): -40 to 175 °C
- Storage Temperature (Tstg): -40 to 150 °C
Electrical Characteristics
- Threshold Voltage (Vth): 2.5 to 4 V
- Transconductance (Gfs): 20 to 40 S
- Output Capacitance (Coss): 100 to 200 pF
- Input Capacitance (Ciss): 1000 to 2000 pF
- Reverse Transfer Capacitance (Crss): 10 to 50 pF
Mechanical Characteristics
- Weight: 10 to 20 g
- Dimensions: 16.5 x 5.6 x 9.9 mm
Applications
- Automotive systems
- Industrial power supplies
- Motor control
- Power conversion systems
Ordering Information
- Part Number: SPA11N80C3XKSA1
- Manufacturer: Infineon
Note: The parameters and characteristics listed above are specific to the SPA11N80C3XKSA1 device and should be used as a reference for design and application purposes.