Description

SI2301CDS-T1-GE3

The SI2301CDS-T1-GE3 is a dual N-channel MOSFET produced by Vishay. This device is designed for high-frequency applications where low capacitance and high-speed switching are crucial.

Key Features:

• Dual N-channel MOSFET
• Low capacitance: 220 pF (typical)
• High-speed switching
• Low on-resistance: 1.7 Ω (typical)
• High current capability: 7.1 A (total, DC)
• Low threshold voltage: 0.5 V (typical)
• High input impedance
• Compliant to RoHS directive

Electrical Characteristics:

• Drain-Source Voltage (Vds): 30 V
• Gate-Source Voltage (Vgs): 12 V
• Continuous Drain Current (Id): 7.1 A
• Pulsed Drain Current (Id): 14 A
• On-Resistance (Rds): 1.7 Ω
• Threshold Voltage (Vth): 0.5 V
• Input Capacitance (Ciss): 220 pF
• Output Capacitance (Coss): 120 pF
• Reverse Transfer Capacitance (Crss): 20 pF

Thermal Characteristics:

• Junction-to-Ambient Thermal Resistance (Rthja): 62.5 °C/W
• Junction-to-Case Thermal Resistance (Rthjc): 2.5 °C/W

Mechanical Characteristics:

• Package Type: SO-8
• Package Dimensions: 5 mm x 6 mm x 1.71 mm
• Lead Thickness: 0.35 mm
• Lead Width: 0.35 mm
• Lead Pitch: 1.27 mm

Applications:

• High-frequency switch mode power supplies
• Class D audio amplifiers
• DC-DC converters
• Power management applications
• Automotive electronics

Documentation:

For more information, please refer to the datasheet and other relevant documentation.