Description
PBSS4260QAZ – N-Channel Trench MOSFET
Product Overview
The PBSS4260QAZ is an N-Channel Trench MOSFET from Nexperia, designed for use in a wide range of applications, including power management, motor control, and switching systems.
Key Features
- Low Rds(on): 23.5 mΩ (.typ) at Vgs=10V
- High Drain Current: 55A (DC)
- Low Gate Charge: 13nC (typ)
- High Switching Speed: 15ns (typ) turn-on, 25ns (typ) turn-off
- ESD Protection: 2kV (HBM), 1kV (CDM)
- Package: D2PAK (TO-263)
Electrical Characteristics
- Drain-Source Voltage (Vds): 60V
- Gate-Source Voltage (Vgs): ±20V
- Drain Current (Id): 55A (DC), 110A (pulsed)
- On-Resistance (Rds(on)): 23.5 mΩ (typ) at Vgs=10V
- Threshold Voltage (Vth): 1.2V (typ)
- Diode Forward Voltage (Vf): 1.2V (typ)
- Input Capacitance (Ciss): 1100pF (typ)
- Reverse Transfer Capacitance (Crss): 55pF (typ)
Thermal Characteristics
- Junction-to-Case Thermal Resistance (Rth(j-c)): 0.6K/W
- Junction-to-Ambient Thermal Resistance (Rth(j-a)): 62.5K/W
Package and Dimensions
- Package Type: D2PAK (TO-263)
- Package Dimensions: 10.28mm x 9.69mm x 4.57mm
- Lead Pitch: 0.66mm
- Weight: 2.1g
Applications
- Power management
- Motor control
- Switching systems
- DC-DC conversion
- Battery management
Compliance and Certifications
- RoHS compliant
- Halogen-free
- China RoHS compliant
Ordering Information
- Part Number: PBSS4260QAZ
- Package: D2PAK (TO-263)
- Minimum Order Quantity: 100 pieces
Note: The parameters and values listed above are subject to change without notice. Please consult the manufacturer’s datasheet for the most up-to-date information.