Description

NVBLSD7N08H ON Semiconductor N-Channel MOSFET

Overview
The NVBLSD7N08H is a high-performance N-Channel MOSFET designed for a wide range of applications, including automotive, industrial, and consumer electronics. This device is manufactured by ON Semiconductor and offers exceptional electrical and thermal characteristics.

Features

• N-Channel MOSFET
• VDS = 80 V
• RDS(on) = 7.5 mΩ (typical)
• ID = 120 A (continuous)
• PD = 160 W (typical)
• TJ = -55 to 150 °C
• Package: SO-8

Electrical Characteristics

• Breakdown Voltage (BVDS): 80 V
• Drain-Source On Resistance (RDS(on)): 7.5 mΩ (typical)
• Gate-Source Threshold Voltage (VGS(th)): 2.5 V (typical)
• Continuous Drain Current (ID): 120 A
• Pulsed Drain Current (IDM): 400 A
• Power Dissipation (PD): 160 W (typical)
• Junction Temperature (TJ): -55 to 150 °C

Thermal Characteristics

• Junction-to-Case Thermal Resistance (RθJC): 0.5 °C/W (typical)
• Junction-to-Ambient Thermal Resistance (RθJA): 62.5 °C/W (typical)

Package Information

• Package Type: SO-8
• Package Dimensions: 5.00 x 6.00 mm
• Lead-Free: Yes
• Halogen-Free: Yes

Applications

• Automotive
• Industrial
• Consumer Electronics
• Power Management
• Motor Control
• DC-DC Conversion

Ordering Information

• Part Number: NVBLSD7N08H
• Package: SO-8

Note: All parameters and specifications are subject to change without notice. For the most up-to-date information, please consult the manufacturer’s datasheet or contact their sales representative.