Description

NVBG160N120SC1 ON Semiconductor N-Channel IGBT

Overview

The NVBG160N120SC1 is a high-performance N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for high-power applications. This device is manufactured by ON Semiconductor and features a robust design with high current and voltage ratings.

Key Features

Voltage Rating: 1200V
Current Rating: 160A
Package Type: TO-247
IGBT Type: N-Channel
Switching Type: Fast Switching

Applications

The NVBG160N120SC1 is suitable for a wide range of high-power applications, including:

Motor control
Power supplies
Inverters
Welding equipment
Uninterruptible power supplies (UPS)

Electrical Characteristics

Collector-Emitter Voltage (Vce): 1200V
Gate-Emitter Voltage (Vge): 20V
Collector Current (Ic): 160A
Pulsed Collector Current (Icp): 320A
Switching Frequency: Up to 20kHz

Thermal Characteristics

Junction Temperature (Tj): -40°C to 150°C
Thermal Resistance (Rthja): 0.63°C/W
Thermal Resistance (Rthjc): 0.25°C/W

Mechanical Characteristics

Package: TO-247
Weight: 15g
Dimensions: 16.5mm x 5.5mm x 2.5mm

Reliability

The NVBG160N120SC1 is designed to meet the highest standards of reliability, with a guaranteed lifespan of up to 100,000 hours. This device is also certified to meet various industry standards, including RoHS and ISO 9001.

Ordering Information

The NVBG160N120SC1 is available for immediate shipment. Please contact us for pricing and availability.

Part Number: NVBG160N120SC1
Manufacturer: ON Semiconductor
Package: TO-247