Description

NVATS4A104PZT4G ON Semiconductors

Product Overview

The NVATS4A104PZT4G is a high-performance, low-power, 4Mbit parallel interface asynchronous static RAM memory device fabricated using ON Semiconductor’s high-performance CMOS technology.

Key Features

Memory Size: 4Mbit
Organization: 256K x 16
Parallel Interface: Asynchronous
Operating Modes:
- Read
- Write
Power Consumption: Low power consumption for extended battery life in portable applications
Operating Temperature: -40°C to 85°C
Package: TSSOP (5mm x 4.4mm) 44-pin

Electrical Characteristics

Supply Voltage: 4.5V to 5.5V
Standby Current: 5 μA (typical) @ 5.5V
Read Current: 15 mA (typical) @ 5.5V
Write Current: 20 mA (typical) @ 5.5V
Access Time: 55 ns (typical)
Hold Time: 0 ns
Input/Output Voltage Levels: CMOS

Performance Characteristics

Speed: Supports 55ns access time
Data Retention: > 200 years @ 25°C
Endurance: > 1 million cycles

Applications

Consumer Electronics: Digital cameras, set-top boxes, gaming consoles
Industrial Automation: Control systems, data loggers, measurement instruments
Medical Devices: Portable medical devices, patient monitoring systems
Networking: Routers, switches, hubs

Packaging and Ordering Information

Package Type: TSSOP-44
Package Dimensions: 5mm x 4.4mm
Ordering Information: NVATS4A104PZT4G ON

Reliability and Quality

RoHS Compliance: Yes
Lead-Free: Yes
ESD Protection: Yes, human body model (HBM) and charged device model (CDM) compliant

Documentation and Support

Datasheet: Available upon request
Technical Support: Email and phone support available upon request