Description

NTNS3A65PZT5G ON Semiconductor N-Channel MOSFET

Overview
The NTNS3A65PZT5G is an N-Channel MOSFET manufactured by ON Semiconductor. This device is designed for high-performance applications, offering a unique combination of low on-resistance, high switching speeds, and robust avalanche characteristics.

Key Features

• N-Channel MOSFET
• VDS: 650 V
• RDS(on) (MAX): 0.45 Ohm
• ID: 6.5 A
• Package: TO-252 (DPAK)
• Mounting Type: Surface Mount

Electrical Characteristics

• Drain-Source Voltage (VDS): 650 V
• Gate-Source Voltage (VGS): ±25 V
• Continuous Drain Current (ID): 6.5 A
• Pulsed Drain Current (IDM): 19.5 A
• On-Resistance (RDS(on)) (MAX): 0.45 Ohm
• Threshold Voltage (VGS(th)): 2.5 V
• Diode Forward Voltage (VF): 1.5 V
• Input Capacitance (Ciss): 540 pF
• Output Capacitance (Coss): 130 pF
• Reverse Transfer Capacitance (Crss): 30 pF

Thermal Characteristics

• Junction-to-Case Thermal Resistance (RthJC): 1.5 °C/W
• Junction-to-Ambient Thermal Resistance (RthJA): 62.5 °C/W
• Operating Junction Temperature (TJ): -55 to 150 °C
• Storage Temperature (Tstg): -55 to 150 °C

Package Characteristics

• Package Type: TO-252 (DPAK)
• Package Dimensions: 6.73 x 5.21 x 1.47 mm
• Lead-Free: Yes
• Halogen-Free: Yes
• RoHS Compliance: Yes

Applications

• Power supplies
• Motor control
• DC-DC converters
• Switching regulators
• Aerospace and defense systems

Documentation

• Datasheet: Available upon request
• RoHS Certificate: Available upon request
• REACH Certificate: Available upon request

Note: The information provided is based on the manufacturer’s datasheet and is subject to change without notice. It is recommended to verify the specifications with the manufacturer before ordering.