Description

NTMYSD2N04CLTWG-ON

Description

The NTMYSD2N04CLTWG-ON is a high-performance, low-loss N-Channel MOSFET designed for high-frequency and high-power applications. This device features a low on-resistance, high current capability, and a robust avalanche rating, making it suitable for a wide range of applications, including switching power supplies, motor control, and high-frequency amplifiers.

Features

• Low on-resistance: 4.5 mΩ (typical)
• High current capability: 190 A (typical)
• High-frequency performance: 30 MHz (typical)
• Robust avalanche rating: 1200 mJ (typical)
• Low gate charge: 110 nC (typical)
• High thermal conductivity: 0.5 W/°C (typical)

Applications

• Switching power supplies
• Motor control
• High-frequency amplifiers
• Power management
• DC-DC converters

Package

• TO-247-3L (D²PAK)

Parameters

• Drain-Source Voltage (Vds): 40 V
• Gate-Source Voltage (Vgs): ±20 V
• Drain Current (Id): 190 A
• On-Resistance (Rds(on)): 4.5 mΩ
• Threshold Voltage (Vth): 2.5 V
• Input Capacitance (Ciss): 6200 pF
• Output Capacitance (Coss): 220 pF
• Reverse Transfer Capacitance (Crss): 30 pF
• Power Dissipation (Pd): 250 W
• Junction Temperature (Tj): 175 °C
• Storage Temperature (Tstg): -55 to 150 °C

Information

For more detailed information and specifications, please refer to the datasheet.

Ordering Information

NTMYSD2N04CLTWG-ON

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