NTMFS5C430NLT1G ON

Description

NTMF5C430NLT1G ON Semiconductor N-Channel MOSFET

Overview

The NTMF5C430NLT1G is an N-Channel MOSFET designed for high-performance applications. It is manufactured by ON Semiconductor and features a low on-resistance, high current rating, and a compact package.

Key Features

  • N-Channel MOSFET
  • Low on-resistance (Rds(on)) of 0.049 ohms
  • High current rating of 120 A
  • Compact D2PAK (TO-263) package
  • Low gate charge (Qg) of 44 nC
  • High power dissipation of 200 W
  • Operating temperature range of -55°C to 150°C

Electrical Characteristics

  • Drain-Source Voltage (Vds): 30 V
  • Gate-Source Voltage (Vgs): 10 V
  • On-Resistance (Rds(on)): 0.049 ohms
  • Drain Current (Id): 120 A
  • Gate Charge (Qg): 44 nC
  • Input Capacitance (Ciss): 1450 pF
  • Output Capacitance (Coss): 340 pF
  • Reverse Transfer Capacitance (Crss): 30 pF

Package and Pinout

  • Package type: D2PAK (TO-263)
  • Pin 1: Gate
  • Pin 2: Drain
  • Pin 3: Source

Applications

  • Power management
  • Motor control
  • Solar inverters
  • UPS systems
  • Industrial power supplies

Documentation

  • Datasheet: Available upon request
  • Application notes: Available upon request

Purchasing Information

  • Part number: NTMF5C430NLT1G
  • Manufacturer: ON Semiconductor
  • Package type: D2PAK (TO-263)
  • Quantity: Available in bulk and tape-and-reel packaging

Note: All parameters are subject to change without notice. It is recommended to verify the specifications with the manufacturer before ordering.