Description

NTMFS006N12MCT1G ON Semiconductor N-Channel MOSFET

Overview

The NTMFS006N12MCT1G is a high-performance, N-Channel MOSFET designed for high-frequency applications. It features a low on-resistance and high current handling capabilities, making it ideal for use in a wide range of applications, including power management, motor control, and switching power supplies.

Key Features

• N-Channel MOSFET
• Low on-resistance (Rds(on)) of 12 mΩ
• High current handling capability of 100 A
• High-frequency operation
• Low gate charge (Qg) of 12 nC
• Low input capacitance (Ciss) of 1200 pF
• High power dissipation capability
• Compact TO-263 (D2PAK) package

Electrical Characteristics

• Drain-Source Voltage (Vds): 30 V
• Gate-Source Voltage (Vgs): ±20 V
• Continuous Drain Current (Id): 100 A
• Pulsed Drain Current (Idm): 200 A
• On-Resistance (Rds(on)): 12 mΩ
• Gate Charge (Qg): 12 nC
• Input Capacitance (Ciss): 1200 pF
• Output Capacitance (Coss): 350 pF
• Reverse Transfer Capacitance (Crss): 50 pF

Thermal Characteristics

• Junction-to-Case Thermal Resistance (Rthjc): 0.5 °C/W
• Junction-to-Ambient Thermal Resistance (Rthja): 62.5 °C/W
• Operating Junction Temperature (Tj): -55 to 150 °C
• Storage Temperature (Tstg): -55 to 150 °C

Package and Dimensions

• Package Type: TO-263 (D2PAK)
• Package Dimensions: 10.28 x 9.45 x 2.39 mm
• Lead Finish: NiPdAu
• Moisture Sensitivity Level (MSL): 1

Applications

• Power management
• Motor control
• Switching power supplies
• DC-DC converters
• High-frequency applications

Ordering Information

• Part Number: NTMFS006N12MCT1G
• Package Type: TO-263 (D2PAK)
• Quantity: 1 piece