NTMFD016N06CT1G ON

Description

NTMFD016N06CT1G ON Semiconductor, N-Channel Mosfet Transistor

Overview

The NTMFD016N06CT1G is a high-performance, N-Channel MOSFET transistor designed for use in a wide range of applications. This device features a low on-resistance, high current handling capability, and a compact package size.

Features

  • N-Channel MOSFET Transistor: Provides high current handling and low on-resistance
  • Low On-Resistance (Rds(on)): 16 mΩ (typ) at Vgs = 10V, Id = 20A
  • High Current Handling: 20A continuous drain current
  • Compact Package: Available in a compact TO-252 (DPAK) package
  • High Switching Speed: Suitable for high-frequency applications

Specifications

  • Drain-Source Voltage (Vds): 60V
  • Gate-Source Voltage (Vgs): ±20V
  • Continuous Drain Current (Id): 20A
  • Pulsed Drain Current (Id): 40A
  • On-Resistance (Rds(on)): 16 mΩ (typ) at Vgs = 10V, Id = 20A
  • Threshold Voltage (Vth): 2.5V (typ)
  • Gate Charge (Qg): 14 nC (typ)
  • Operating Temperature Range: -55°C to 150°C

Applications

  • Power Management: DC-DC converters, power supplies, and voltage regulators
  • Motor Control: DC motor control, servo motor control, and robotic applications
  • Industrial Control: Industrial automation, process control, and control systems
  • Aerospace and Defense: Military and aerospace applications requiring high reliability and performance

Package and Availability

  • Package Type: TO-252 (DPAK)
  • Pin Count: 3
  • Package Dimensions: 6.73mm x 5.03mm x 2.39mm
  • Availability: Available in tray or tape and reel packaging

Additional Information

  • RoHS Compliant: Yes
  • Halogen-Free: Yes
  • Lead-Free: Yes

Note: All parameters and specifications are subject to change without notice. For the most up-to-date information, please consult the manufacturer’s datasheet or contact the manufacturer directly.