Description

NTD600N80S3Z-ON

Description

The NTD600N80S3Z-ON is a high-performance, N-channel power MOSFET designed for high-frequency switching applications. With its advanced technology and robust design, this device offers low on-resistance, high current handling, and excellent thermal performance.

Features

• High current rating: 600 A
• Low on-resistance: 0.8 mΩ
• High-frequency switching: Optimized for high-speed switching applications
• Robust design: Withstands high voltage and current stresses
• Excellent thermal performance: Low thermal resistance for efficient heat dissipation

Specifications

Electrical Characteristics

• VDS (drain-to-source voltage): 80 V
• ID (continuous drain current): 600 A
• RDS(on) (on-resistance): 0.8 mΩ
• VGS(th) (gate-to-source threshold voltage): 3.5 V
• IDSS (zero-gate voltage drain current): 10 μA

Thermal Characteristics

• Tj (junction temperature): 175 °C
• Rth(j-a) (thermal resistance, junction-to-ambient): 0.15 °C/W

Package Characteristics

• Package type: TO-247
• Weight: 15 g

Applications

• High-frequency converters
• Motor control
• Power supplies
• Solar inverters
• Wind power systems

Documentation

• Datasheet: Available upon request
• Application notes: Available upon request

Ordering Information

• Part number: NTD600N80S3Z-ON
• Packaging: TO-247
• Quantity: Please contact us for pricing and availability