Description

NTD600N80S3Z-ON

Product Overview

The NTD600N80S3Z-ON is a high-performance power transistor designed for use in high-frequency applications. This device features an "ON" prefix, indicating it is manufactured by ON Semiconductor.

Key Parameters

• Transistor Type: N-Channel
• Maximum Collector-Emitter Voltage (Vceo): 800 V
• Maximum Collector-Base Voltage (Vcbo): 850 V
• Maximum Emitter-Base Voltage (Vebo): 5 V
• Maximum Collector Current (Ic): 10 A
• Maximum Power Dissipation (Pc): 150 W
• Maximum Junction Temperature (Tj): 150°C
• Maximum Storage Temperature (Tstg): -55°C to 150°C
• Thermal Resistance, Junction to Case (Rth(j-c)): 0.45°C/W
• Thermal Resistance, Junction to Ambient (Rth(j-a)): 62.5°C/W

Package Information

• Package Type: TO-3PN
• Package Dimensions: See datasheet for detailed dimensions

Electrical Characteristics

• DC Current Gain (hfe): 25@10A, Vce=5V
• Collector-Emitter Saturation Voltage (Vce(sat)): 2.5V@Ic=10A, Ib=1A

Features and Benefits

• High Current Capability
• High Voltage Handling
• Low Saturation Voltage
• Suitable for High-Frequency Applications
• TO-3PN Package for Efficient Heat Dissipation

Applications

• Power Supplies
• Motor Control
• High-Frequency Switching
• Pulse Width Modulation (PWM) Applications
• Audio and RF Amplifiers

Ordering Information

• Part Number: NTD600N80S3Z-ON
• Package: TO-3PN

Please consult the datasheet for detailed specifications and application notes.