NTD250N65S3H ON
Available |
NTD250N65S3H ON
• 700 V @ TJ = 150°C
• Typ. RDS(on) = 201 m
• Ultra Low Gate Charge (Typ. Qg = 24 nC)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 229 pF)
• 100% Avalanche Tested
• These Devices are Pb−Free and are RoHS Compliant
• 700 V @ TJ = 150°C
• Typ. RDS(on) = 201 m
• Ultra Low Gate Charge (Typ. Qg = 24 nC)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 229 pF)
• 100% Avalanche Tested
• These Devices are Pb−Free and are RoHS Compliant
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