Description

NTD250N65S3H ON Semiconductor N-Channel MOSFET

Overview

The NTD250N65S3H is a high-performance N-Channel MOSFET designed for high-power applications. It features a low on-resistance and high current handling capability, making it suitable for a wide range of applications, including switch mode power supplies, motor control, and high-power amplifiers.

Features

• N-Channel MOSFET
• V DS (Drain-Source Voltage): 650 V
• I D (Continuous Drain Current): 250 A
• R DS (on) (On-Resistance): 0.040 Ω
• P D (Maximum Power Dissipation): 250 W
• Package: TO-247

Electrical Characteristics

• V GS(th) (Threshold Voltage): 2.5 – 4.0 V
• V DS (Drain-Source Voltage): 650 V
• I DSS (Zero-Gate-Voltage Drain Current): 250 μA
• I GSS (Zero-Gate-Voltage Gate Current): 100 nA
• Q g (Total Gate Charge): 120 nC
• Q gd (Gate-Drain Charge): 30 nC
• Q gs (Gate-Source Charge): 20 nC

Thermal Characteristics

• T J (Operating Junction Temperature): -55 to 150°C
• T STG (Storage Temperature): -55 to 150°C
• R thJA (Thermal Resistance, Junction-to-Ambient): 62.5°C/W
• R thJC (Thermal Resistance, Junction-to-Case): 1.08°C/W

Mechanical Characteristics

• Package: TO-247
• Weight: 5.5 g
• Dimensions: 16.5 x 5.6 x 2.2 mm

Applications

• Switch mode power supplies
• Motor control
• High-power amplifiers
• Power factor correction
• Uninterruptible power supplies

Note: The information provided is for reference purposes only and is subject to change without notice. For the most up-to-date information, please consult the manufacturer’s documentation.