Description
NTBLS001N06C ON Semiconductor N-Channel MOSFET
Overview
The NTBLS001N06C is an N-Channel MOSFET manufactured by ON Semiconductor. It is designed for use in a variety of applications, including power management and switching.
Key Features
- N-Channel MOSFET: Allows for efficient and effective switching and power management
- Vds (Drain-Source Voltage): 60 V
- Id (Continuous Drain Current): 80 A
- Rds(on) (Maximum Drain-Source On-Resistance): 2.5 mΩ
- Pmax (Maximum Power Dissipation): 150 W
- Tj (Operating Junction Temperature): -55°C to 150°C
- Package Type: TO-263 (D2PAK)
Electrical Characteristics
| Parameter | Value | Unit |
|---|---|---|
| Vds | 60 | V |
| Id | 80 | A |
| Rds(on) | 2.5 | mΩ |
| Vgs(th) (Threshold Voltage) | 2.5 | V |
| Qg (Total Gate Charge) | 120 | nC |
| Qgd (Gate-Drain Charge) | 30 | nC |
| Is (Continuous Source Current) | 80 | A |
| Pmax | 150 | W |
| Tj | -55 to 150 | °C |
Thermal Characteristics
| Parameter | Value | Unit |
|---|---|---|
| Rth(j-a) (Junction-to-Ambient Thermal Resistance) | 30 | °C/W |
| Rth(j-c) (Junction-to-Case Thermal Resistance) | 2 | °C/W |
Package Information
- Package Type: TO-263 (D2PAK)
- Number of Pins: 3
- Weight: 2.5 g
Applications
- Power management
- Switching
- Motor control
- Power supplies
- DC-DC converters
Note: All parameters listed are subject to change without notice. It is recommended to consult the manufacturer’s datasheet for the most up-to-date information.