Description

NTBG020N090SC1 ON Semiconductor

Product Overview

The NTBG020N090SC1 is a power semiconductor device manufactured by ON Semiconductor. It is designed for high-power applications, providing reliable and efficient performance.

Key Features

Type: Insulated Gate Bipolar Transistor (IGBT)
Package: TO-247
Voltage Rating: 900 V
Current Rating: 20 A
Switching Frequency: High-frequency switching capability

Electrical Characteristics

Collector-Emitter Voltage (Vce): 900 V
Gate-Emitter Voltage (Vge): 20 V
Collector Current (Ic): 20 A
Pulse Collector Current (Icp): 40 A

Thermal Characteristics

Junction Temperature (Tj): 150°C
Thermal Resistance (Rth(j-c)): 1.08°C/W
Thermal Resistance (Rth(j-a)): 62.5°C/W

Mechanical Characteristics

Package Type: TO-247
Weight: 7.5 g
Dimensions: 16.5 mm x 5.6 mm x 2.2 mm

Applications

Power Supply: Switch-mode power supplies, DC-DC converters
Motor Control: Industrial motor control, servo motor control
Renewable Energy: Solar inverters, wind power converters
Electric Vehicles: Traction control, battery management

Ordering Information

Part Number: NTBG020N090SC1
Manufacturer: ON Semiconductor