Description
NTB110N65S3HF ON SEMICONDUCTOR N-CHANNEL MOSFET
Overview
The NTB110N65S3HF is a high performance N-Channel MOSFET designed for high frequency applications. It features low on-resistance, high switching speeds, and a robust design to ensure reliable operation.
Key Features
- Low On-Resistance: 65 mΩ (typical) at Vgs = 10V
- High Frequency Operation: Suitable for high frequency applications up to 500 kHz
- High Switching Speeds: 10 ns (typical) turn-on time and 20 ns (typical) turn-off time
- Robust Design: High ruggedness and reliability
Electrical Characteristics
- Drain-Source Voltage: 650 V
- Gate-Source Voltage: ±30 V
- Continuous Drain Current: 110 A
- Pulsed Drain Current: 220 A
- On-Resistance: 65 mΩ (typical) at Vgs = 10V
- Threshold Voltage: 2.5 V (typical)
- Leakage Current: 100 μA (maximum) at Vds = 650 V
Thermal Characteristics
- Junction-to-Case Thermal Resistance: 0.5°C/W (typical)
- Junction-to-Ambient Thermal Resistance: 62.5°C/W (typical)
Package and Dimensions
- Package Type: TO-247
- Lead-Free: Yes
- Halogen-Free: Yes
- Dimensions: 15.8 mm x 20.3 mm x 2.3 mm
Applications
- High Frequency Power Supplies
- DC-DC Converters
- Motor Control
- Power Factor Correction
- Uninterruptible Power Supplies
Documents
- Datasheet: Available upon request
- Application Notes: Available upon request
Ordering Information
- Part Number: NTB110N65S3HF
- Package Type: TO-247
- Quantity: Available in various quantities, including reel and tube packaging.