Description
NGTB05N60R2DT4G-ON
Product Overview
The NGTB05N60R2DT4G-ON is a high-performance power MOSFET designed for a wide range of applications, including power supplies, motor control, and renewable energy systems.
Key Features
- High Voltage Rating: 600V
- Low On-Resistance: 0.055Ω (typ.)
- High Current Rating: 52A (TC=25°C)
- Fast Switching Times: t-rise = 25ns (typ.), t-fall = 20ns (typ.)
- Low Gate Charge: 110nC (typ.)
Electrical Characteristics
| Parameter | Symbol | Conditions | Min | Typ | Max |
|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | VGS=0V, ID=250μA | – | – | 600V |
| Gate-Source Voltage | VGS | VDS=0V, ID=250μA | – | – | ±20V |
| Drain Current | ID | TC=25°C | – | 52A | – |
| On-Resistance | RDS(ON) | VGS=10V, ID=25A | – | 0.055Ω | – |
| Threshold Voltage | VGS(th) | VDS=VGS, ID=250μA | 2V | 3V | 4V |
| Gate Charge | Qg | VDS=400V, VGS=10V | – | 110nC | – |
Package and Thermal Characteristics
- Package Type: TO-247
- Thermal Resistance: Rth(j-a) = 1.08°C/W (typ.)
- Junction-to-Case Thermal Resistance: Rth(j-c) = 0.5°C/W (typ.)
Applications
- Power supplies (e.g. SMPS, UPS)
- Motor control (e.g. AC/DC, DC/DC)
- Renewable energy systems (e.g. solar, wind)
- Industrial control systems
Ordering Information
- Part Number: NGTB05N60R2DT4G-ON
- Package: TO-247
Note: The specifications and parameters listed above are subject to change without notice. For the most up-to-date information, please consult the manufacturer’s documentation or contact their technical support team.