Description

NDD60N745U1T4G-ON

Product Overview

The NDD60N745U1T4G-ON is a high-performance N-Channel MOSFET with a rated voltage of 60V and a current rating of 745A. It features a low on-resistance of 1mΩ and a robust design, making it suitable for high-power application.

Key Parameters

• VDS (Drain-Source Voltage): 60V
• ID (Continuous Drain Current): 745A
• RDS(ON) (On-Resistance): 1mΩ
• Package Type: TO-247-4

Electrical Characteristics

• VGS (Gate-Source Voltage): 10V
• VGS(th) (Threshold Voltage): 2-4V
• Gate Charge (Qg): 210nC
• EAS (Single Pulse Avalanche Energy): 320mJ

Thermal Characteristics

• Tj (Operating Junction Temperature): -55°C to 175°C
• RthJC (Thermal Resistance, Junction-to-Case): 0.08°C/W
• RthJA (Thermal Resistance, Junction-to-Ambient): 62°C/W

Package Information

• Package Type: TO-247-4
• Weight: 18g
• Dimensions: 38.5 x 25.5 x 10.5mm

Applications

The NDD60N745U1T4G-ON is suitable for high-power applications such as:

• Server Power Supplies
• Telecom Power Supplies
• Industrial Power Supplies
• Electric Vehicles
• Renewable Energy Systems