NCP51510MNTAG ON
| Available |
NCP51510MNTAG ON
• Generate DDR Memory Termination Voltage (VTT)
• For DDR, DDR−2, DDR−3 and DDR−4 Source / Sink Currents
• Supports Loads Up to ±3 A (Typ), Output is Over−Current Protected
• Integrated MOSFETs with Thermal Shutdown Protection
• Fast Load−Transient Response
• PGOOD Output Pin to Monitor Status of VTT Output Regulation
• SS Input Pin for Suspend Shutdown mode
• VRI Input Reference for Flexible Voltage Tracking
• VTTS Input for Remote Sensing (Kelvin Connection)
• Built−in Soft−Start, Under Voltage Lockout
• Small, Low−Profile 10−pin, 3 x 3 mm DFN Package
• NCV51510MWTAG − Wettable Flank Option for Enhanced Optical Inspection
• NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable*
• This is a Pb−Free Device
• Generate DDR Memory Termination Voltage (VTT)
• For DDR, DDR−2, DDR−3 and DDR−4 Source / Sink Currents
• Supports Loads Up to ±3 A (Typ), Output is Over−Current Protected
• Integrated MOSFETs with Thermal Shutdown Protection
• Fast Load−Transient Response
• PGOOD Output Pin to Monitor Status of VTT Output Regulation
• SS Input Pin for Suspend Shutdown mode
• VRI Input Reference for Flexible Voltage Tracking
• VTTS Input for Remote Sensing (Kelvin Connection)
• Built−in Soft−Start, Under Voltage Lockout
• Small, Low−Profile 10−pin, 3 x 3 mm DFN Package
• NCV51510MWTAG − Wettable Flank Option for Enhanced Optical Inspection
• NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable*
• This is a Pb−Free Device
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