NB3N51044DTR2G ON

Description

NB3N5104DTTR2G ON Semiconductor N Channel MOSFET

Overview

The NB3N5104DTTR2G is an N-Channel MOSFET designed and manufactured by ON Semiconductor. It is part of a family of devices that offer a balance between performance and power efficiency, making them suitable for a wide range of applications. This device is characterized by its high current and low on-resistance, which allows for efficient operation in various power management and control circuits.

Key Features

  • N-Channel MOSFET: Suitable for high-power applications where control over the flow of electrical current is needed.
  • Low On-Resistance (Rds(on)): Allows for minimal power loss during operation, contributing to overall efficiency and reliability.
  • High Current Rating: Enables the handling of high currents, making it suitable for applications requiring significant power.
  • Small Package: The device comes in a compact package, which is beneficial for applications where space is limited, allowing for more flexible design options.
  • High Switching Speed: Fast switching times make this MOSFET suitable for applications requiring rapid control over electrical currents.

Applications

  • Power Management: Ideal for use in power management circuits where efficient control and distribution of power are critical.
  • DC-DC Conversion: Can be used in DC-DC converters for efficient power conversion.
  • Motor Control: Suitable for applications involving the control of motors, where high current and fast switching are required.

Specifications

  • Package Type: DTR (Dual Thin Ratio)
  • Number of Pins: 3
  • Configuration: Single N-Channel MOSFET
  • Drain-Source Voltage (Vds): Up to 30V
  • Gate-Source Voltage (Vgs): Up to 20V
  • Continuous Drain Current (Id): Up to 33A
  • On Resistance (Rds(on)): Typically 11.5mΩ
  • Threshold Voltage (Vth): Typically 0.5V

Mechanical Characteristics

  • Shipping: Tape and Reel
  • Moisture Sensitivity Level (MSL): 1
  • ESD Protection: Yes

Thermal Characteristics

  • Junction to Case Thermal Resistance (RθJC): 62°C/W
  • Junction to Ambient Thermal Resistance (RθJA): 125°C/W

Additional Information

For the most accurate and up-to-date information, including datasheets, application notes, and product availability, please consult the manufacturer’s official website or contact an authorized distributor.