Description
MUN5111DW1T1G ON Semiconductor
Product Overview
The MUN5111DW1T1G is a high-performance, N-Channel enhancement mode silicon gate transistor manufactured by ON Semiconductor. It is designed for high-power amplification and switching applications, offering excellent efficiency and reliability.
Key Features
- Configuration: Single
- Transistor Type: N-Channel
- Maximum Power Dissipation (Pd): 2 W
- Maximum Drain-Source Voltage (Vds): 30 V
- Maximum Gate-Source Voltage (Vgs): ±20 V
- On Resistance (Rds(on)): Typically 0.18 Ω
- Drain Current – Continuous (Id): 2 A
- Operating Temperature Range (Tj): -55°C to 150°C
Product Details
The MUN5111DW1T1G is offered in a SOIC-8 (D) package, featuring a compact design that makes it suitable for a wide range of applications where space-saving is critical. Its N-Channel configuration allows for efficient operation in both linear and switching modes, making it versatile for various circuit designs.
Applications
This transistor is ideal for use in high-power amplification circuits, switching devices, and power supply systems. Its high drain current and low on-resistance make it particularly suitable for applications requiring efficient power handling and minimal heat generation.
Technical Specifications
| Parameter | Value | Units |
|---|---|---|
| Maximum Power Dissipation (Pd) | 2 | W |
| Maximum Drain-Source Voltage (Vds) | 30 | V |
| Maximum Gate-Source Voltage (Vgs) | ±20 | V |
| On Resistance (Rds(on)) | 0.18 (Typ) | Ω |
| Drain Current – Continuous (Id) | 2 | A |
| Operating Temperature Range (Tj) | -55 to 150 | °C |
| Package Type | SOIC-8 (D) |
Additional Information
For the most current and detailed information, including datasheets, application notes, and ordering information, please visit the ON Semiconductor website or contact an authorized distributor. The MUN5111DW1T1G is designed to provide robust performance in a variety of electronic systems, making it a reliable choice for designers and engineers seeking high-quality semiconductor components.