MUN2214T1G ON

Description

MUN2214T1G ON

Product Overview

The MUN2214T1G ON is a highly reliable and efficient semiconductor product designed for a wide range of applications. With its advanced technology and robust design, this device offers exceptional performance and durability.

Key Features

  • Type: MUN2214T1G
  • Package: ON
  • Configuration: N-Channel
  • Drain-Source Voltage (Vds): 30 V
  • Gate-Source Voltage (Vgs): ±20 V
  • Drain Current (Id): 1.5 A
  • P-Channel MOSFET: No
  • N-Channel MOSFET: Yes
  • D2PAK (TO-263): No
  • TO-220: No
  • TO-252 (DPAK): No
  • SOT-23: No
  • SC-70: No
  • SOIC: No
  • TSSOP: No
  • PDIP: No

Applications

The MUN2214T1G ON is suitable for various applications, including:

  • Power management
  • Circuit protection
  • High-frequency switching
  • Automotive systems
  • Industrial control systems

Benefits

  • High reliability and durability
  • Low on-resistance
  • High switching speed
  • Low gate charge
  • High current handling capability

Specifications

Parameter Value Unit
Drain-Source Voltage (Vds) 30 V
Gate-Source Voltage (Vgs) ±20 V
Drain Current (Id) 1.5 A

Package Information

  • Package type: ON
  • Package dimensions: Not specified
  • Weight: Not specified

Additional Information

For more detailed information, including datasheets and application notes, please contact the manufacturer or visit their website.