Description
MUN2214T1G ON
Product Overview
The MUN2214T1G ON is a highly reliable and efficient semiconductor product designed for a wide range of applications. With its advanced technology and robust design, this device offers exceptional performance and durability.
Key Features
- Type: MUN2214T1G
- Package: ON
- Configuration: N-Channel
- Drain-Source Voltage (Vds): 30 V
- Gate-Source Voltage (Vgs): ±20 V
- Drain Current (Id): 1.5 A
- P-Channel MOSFET: No
- N-Channel MOSFET: Yes
- D2PAK (TO-263): No
- TO-220: No
- TO-252 (DPAK): No
- SOT-23: No
- SC-70: No
- SOIC: No
- TSSOP: No
- PDIP: No
Applications
The MUN2214T1G ON is suitable for various applications, including:
- Power management
- Circuit protection
- High-frequency switching
- Automotive systems
- Industrial control systems
Benefits
- High reliability and durability
- Low on-resistance
- High switching speed
- Low gate charge
- High current handling capability
Specifications
Parameter | Value | Unit |
---|---|---|
Drain-Source Voltage (Vds) | 30 | V |
Gate-Source Voltage (Vgs) | ±20 | V |
Drain Current (Id) | 1.5 | A |
Package Information
- Package type: ON
- Package dimensions: Not specified
- Weight: Not specified
Additional Information
For more detailed information, including datasheets and application notes, please contact the manufacturer or visit their website.