Description

MUN2211T1G-ON

Description:
The MUN2211T1G-ON is a highly reliable and efficient semiconductor component, designed to provide optimal performance in a wide range of applications.

Key Features:

• Package Type: ON
• Polarity: N-Channel
• Drain-Source Voltage (Vds): -30V
• Gate-Source Voltage (Vgs): ±20V
• Continuous Drain Current (Id): -1.7A
• Pulsed Drain Current (Idm): -4.5A
• Static Drain-Source On-Resistance (Rds(on)): 1.1Ω
• Threshold Voltage (Vth): 0.5V to 1.3V
• Input Capacitance (Ciss): 220pF
• Output Capacitance (Coss): 120pF
• Reverse Transfer Capacitance (Crss): 30pF

Absolute Maximum Ratings:

• Drain-Source Voltage (Vds): -30V
• Gate-Source Voltage (Vgs): ±20V
• Continuous Drain Current (Id): -1.7A
• Pulsed Drain Current (Idm): -4.5A
• Storage Temperature (Tstg): -55°C to 150°C
• Operating Temperature (Top): -55°C to 125°C

Thermal Characteristics:

• Junction-to-Case Thermal Resistance (Rth(j-c)): 62.5°C/W
• Junction-to-Ambient Thermal Resistance (Rth(j-a)): 125°C/W

Ordering Information:

• Part Number: MUN2211T1G-ON

Note: All parameters are subject to change without notice. Please consult the manufacturer’s documentation for the most up-to-date information.