Description

MUN2111T1G-ON

Description:
The MUN2111T1G-ON is a high-performance, low-power consumption N-Channel MOSFET transistor. It is designed for use in a wide range of applications, including switching power supplies, DC-DC converters, and motor control circuits.

Key Features:

• Low On-Resistance: Rds(on) = 11 mΩ (typical)
• High Drain Current: Id = 190 A (continuous)
• Low Gate Charge: Qg = 110 nC (typical)
• High Switching Speed: tr = 15 ns (typical), tf = 20 ns (typical)
• Low Leakage Current: Idss = 10 μA (maximum)

Electrical Characteristics:

• Drain-Source Voltage: Vds = 30 V
• Gate-Source Voltage: Vgs = ±20 V
• Continuous Drain Current: Id = 190 A
• Pulsed Drain Current: Idm = 570 A
• On-Resistance: Rds(on) = 11 mΩ (typical)
• Threshold Voltage: Vth = 1.5 V (typical)
• Gate Charge: Qg = 110 nC (typical)
• Gate-Source Charge: Qgs = 25 nC (typical)
• Gate-Drain Charge: Qgd = 30 nC (typical)

Package and Thermal Characteristics:

• Package Type: TO-252
• Junction-to-Ambient Thermal Resistance: Rth(j-a) = 62.5 °C/W
• Junction-to-Case Thermal Resistance: Rth(j-c) = 2.5 °C/W

Applications:

• Switching Power Supplies
• DC-DC Converters
• Motor Control Circuits
• Power Management Circuits

Certifications and Compliance:

• RoHS Compliant
• REACH Compliant

Note: All parameters are subject to change without notice. Please consult the manufacturer’s datasheet for the most up-to-date information.