Description

MT41K256M16TW-107IT:P

Description
The MT41K256M16TW-107IT:P is a DDR3L SDRAM device, offering a high-density memory solution for various applications. This device is designed to provide superior performance, low power consumption, and high reliability.

Key Features

• Density: 4Gb
• Organization: 256M x 16
• Speed Grade: 1333MHz (7-7-7)
• Supply Voltage: 1.35V/1.5V
• Package Type: 96-ball FBGA (9mm x 13mm)
• Temperature Range: 0°C to 95°C (Industrial Temperature)

Technical Specifications

• Cell Array: 256M x 16
• Number of Banks: 8
• Number of Rows: 16K
• Number of Columns: 1024
• Data Width: 16 bits
• Burst Lengths: 4, 8
• CAS Latency: 7, 8, 9, 10, 11
• Read/Write Latency: 7-7-7 (AL=0)
• Refresh Rate: 7.8us (at 0°C to 85°C)
• Self-Refresh Temperature Range: 0°C to 95°C

Timing Parameters

• tAC (Access Time): 7ns (min) / 10ns (max)
• tHZ (Output Disable): 6ns (min) / 10ns (max)
• tLZ (Output Enable): 6ns (min) / 10ns (max)
• tRCD (RAS to CAS Delay): 7ns (min) / 15ns (max)
• tRP (RAS Precharge): 7ns (min) / 15ns (max)
• tRAS (RAS Active Time): 27ns (min) / 60ns (max)
• tRC (Row Cycle Time): 44.75ns (min) / 100ns (max)
• tWR (Write Recovery Time): 7.5ns (min) / 15ns (max)
• tWTR (Write to Read Delay): 2.5ns (min) / 7.5ns (max)
• tRRD (RAS to RAS Delay): 4ns (min) / 7.5ns (max)
• tFAW (Four Activate Window Delay): 20ns (min) / 40ns (max)

Power Consumption

• Active Power: 1.35V (typ) / 1.5V (max)
• Standby Power: 1.35V (typ) / 1.5V (max)
• Sleep Power: 1.35V (typ) / 1.5V (max)
• Self-Refresh Power: 1.35V (typ) / 1.5V (max)

Operating Conditions

• Ambient Temperature: 0°C to 95°C
• Storage Temperature: -40°C to 100°C
• Relative Humidity: 5% to 95% (non-condensing)

Reliability

• MTBF (Mean Time Between Failures): > 100,000 hours
• Data Retention: 16 years (typ) / 10 years (min)