Description
MMSZ39T1G ON Semiconductors N-Channel MOSFET
Description:
The MMSZ39T1G is a high voltage, high current N-Channel MOSFET designed for use in a wide range of applications. It is manufactured by ON Semiconductors and is part of their sustaining and innovative product portfolio.
Key Parameters:
- Drain-Source Voltage (Vds): 1000 V
- Gate-Source Voltage (Vgs): ±30 V
- Drain Current (Id): 0.01 A
- On-Resistance (Rds(on)): 1000 mΩ
- Input Capacitance (Ciss): 9 pF
- Output Capacitance (Coss): 2 pF
- Reverse Transfer Capacitance (Crss): 0.5 pF
- Power Dissipation (Pd): 0.2 W
Package and Thermal Characteristics:
- Package Type: SOT-23
- Thermal Resistance, Junction to Ambient (RθJA): 312.5 °C/W
- Thermal Resistance, Junction to Case (RθJC): 125 °C/W
Applications:
The MMSZ39T1G is suitable for use in a variety of high voltage applications, including:
- Power supplies
- Motor control
- Lighting systems
- Industrial automation
Features and Benefits:
The MMSZ39T1G offers several key features and benefits, including:
- High voltage and current handling capabilities
- Low on-resistance for reduced power loss
- High input impedance for reduced gate drive requirements
- Compact SOT-23 package for space-saving designs
Documentation:
For more information on the MMSZ39T1G, please refer to the datasheet and other supporting documentation available from ON Semiconductors.