MMSZ39T1G ON

Description

MMSZ39T1G ON Semiconductors N-Channel MOSFET

Description:
The MMSZ39T1G is a high voltage, high current N-Channel MOSFET designed for use in a wide range of applications. It is manufactured by ON Semiconductors and is part of their sustaining and innovative product portfolio.

Key Parameters:

  • Drain-Source Voltage (Vds): 1000 V
  • Gate-Source Voltage (Vgs): ±30 V
  • Drain Current (Id): 0.01 A
  • On-Resistance (Rds(on)): 1000 mΩ
  • Input Capacitance (Ciss): 9 pF
  • Output Capacitance (Coss): 2 pF
  • Reverse Transfer Capacitance (Crss): 0.5 pF
  • Power Dissipation (Pd): 0.2 W

Package and Thermal Characteristics:

  • Package Type: SOT-23
  • Thermal Resistance, Junction to Ambient (RθJA): 312.5 °C/W
  • Thermal Resistance, Junction to Case (RθJC): 125 °C/W

Applications:
The MMSZ39T1G is suitable for use in a variety of high voltage applications, including:

  • Power supplies
  • Motor control
  • Lighting systems
  • Industrial automation

Features and Benefits:
The MMSZ39T1G offers several key features and benefits, including:

  • High voltage and current handling capabilities
  • Low on-resistance for reduced power loss
  • High input impedance for reduced gate drive requirements
  • Compact SOT-23 package for space-saving designs

Documentation:
For more information on the MMSZ39T1G, please refer to the datasheet and other supporting documentation available from ON Semiconductors.