Description
MMBTA55LT1G ON Semiconductor N-Channel Transistor
Overview
The MMBTA55LT1G is an N-Channel Transistor designed by ON Semiconductor. It is part of the MMBT series, which is widely used for general-purpose switching and amplification applications. The device is known for its high current and voltage handling capabilities, making it suitable for a variety of electronic circuits.
Key Features
- Package Type: SOT-23
- Polarity: N-Channel
- Collector-Emitter Voltage (Vce): -60 V
- Collector-Base Voltage (Vcb): -60 V
- Emitter-Base Voltage (Veb): -5 V
- Collector Current (Ic): -500 mA
- Base Current (Ib): -50 mA
- Power Dissipation (Pd): 625 mW
- Operating Junction Temperature (Tj): -55 to 150°C
- Storage Temperature (Tstg): -55 to 150°C
Applications
The MMBTA55LT1G is versatile and can be used in numerous applications, including but not limited to:
- General-purpose switching
- Amplification circuits
- Power management circuits
- Automotive electronics
- Consumer electronics
Electrical Characteristics
- Collector-Emitter Saturation Voltage (Vce(sat)): -0.3 V (Ic = -100 mA, Ib = -5 mA)
- DC Current Gain (hFE): 100 (Vce = -5 V, Ic = -100 mA)
- Base-Emitter Saturation Voltage (Vbe(sat)): -0.8 V (Ic = -100 mA, Ib = -5 mA)
Mechanical Characteristics
- Weight: Approximately 0.05 grams
- Dimensions: 2.9 x 1.6 x 0.95 mm
Order Information
For orders and further inquiries about the MMBTA55LT1G, please contact ON Semiconductor directly through their official website or authorized distributors. Ensure to verify the part number, packaging, and any specific requirements for your application.
Important Notes
- Always refer to the latest datasheet from the manufacturer for the most current specifications and application information.
- The MMBTA55LT1G is a static-sensitive device. Proper precautions should be taken to prevent damage from electrostatic discharge.