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Automotive Grade Chip | Electronic Component Guard > Products > MM3Z43VT1G ON

MM3Z43VT1G ON

Description

MM3Z43VT1G ON Semiconductor N-Channel MOSFET

Description:
The MM3Z43VT1G is an N-Channel MOSFET produced by ON Semiconductor. This device is designed for low-voltage, high-current applications, making it suitable for a variety of uses, including power management and control in electronic devices.

Key Features:

  • Voltage Rating: The device has a maximum drain-source voltage (Vds) of 30V, allowing it to handle a range of voltage inputs and outputs.
  • Current Capability: With a continuous drain current (Id) of 3.4A, this MOSFET can manage significant current flows, making it appropriate for applications requiring substantial power handling.
  • Gate-Source Voltage: The gate-source voltage (Vgs) threshold is 1V, meaning the device starts to conduct when the gate voltage exceeds this threshold, allowing for efficient control of the MOSFET.
  • On-Resistance (Rds(on)): The device has a low on-resistance of 0.084 ohms, minimizing energy loss and heat generation during conduction, which is crucial for efficient power management.
  • Package Type: The MM3Z43VT1G comes in a SOT-23 package, a compact, surface-mount package suitable for space-saving designs and high-density applications.

Applications:
The MM3Z43VT1G N-Channel MOSFET is versatile and can be used in various applications, including:

  • Power management circuits for efficient voltage regulation
  • Switching circuits where high current and low voltage drops are required
  • Electronic device control, such as motor control, where precise current management is necessary
  • Audio amplifiers and other consumer electronics where low distortion and high current capability are beneficial

Specifications:

  • Drain-Source Voltage (Vds): 30V
  • Gate-Source Voltage (Vgs): ±20V
  • Continuous Drain Current (Id): 3.4A
  • Pulse Drain Current (Idm): 10.2A
  • On-Resistance (Rds(on)): 0.084 ohms (at Vgs=10V, Id=3.4A)
  • Threshold Voltage (Vth): 1V
  • Input Capacitance (Ciss): 480 pF
  • Operating Temperature Range: -55°C to 150°C
  • Package: SOT-23

Conclusion:
The MM3Z43VT1G is a powerful N-Channel MOSFET that offers a balance of high current capability, low on-resistance, and compact packaging, making it an ideal choice for a wide range of electronic applications requiring efficient power management and control.