MM3Z15VT1G ON

Description

MM3Z15VT1G ON Semiconductor N-Channel MOSFET

Overview
The MM3Z15VT1G is a N-Channel MOSFET manufactured by ON Semiconductor. It is designed for high-power applications, offering a low on-resistance and high current handling capability.

Key Features

  • N-Channel MOSFET
  • Low on-resistance: 15 mΩ (typ)
  • High current handling capability: 60 A (DC)
  • High voltage rating: 30 V (DC)
  • Small package size: SO-8
  • RoHS compliant

Electrical Characteristics

  • Drain-Source Voltage (Vds): 30 V (DC)
  • Gate-Source Voltage (Vgs): ±20 V (DC)
  • Drain Current (Id): 60 A (DC)
  • On-Resistance (Rds(on)): 15 mΩ (typ)
  • Threshold Voltage (Vth): 1.5 V (typ)
  • Input Capacitance (Ciss): 3500 pF (typ)
  • Output Capacitance (Coss): 1000 pF (typ)
  • Reverse Transfer Capacitance (Crss): 100 pF (typ)

Package and Thermal Characteristics

  • Package Type: SO-8
  • Junction-to-Ambient Thermal Resistance (Rth(j-a)): 62.5 °C/W
  • Junction-to-Case Thermal Resistance (Rth(j-c)): 10 °C/W

Applications

  • DC-DC converters
  • Motor control
  • Power management
  • Battery protection
  • Automotive systems

Ordering Information

  • Part Number: MM3Z15VT1G
  • Package Type: SO-8
  • Quantity: 1 piece (minimum order quantity)

Note: All parameters are subject to change without notice. Please verify with the manufacturer for the most up-to-date information.