Description
MM3Z10VT1G ON Semiconductor N-Channel MOSFET
Overview
The MM3Z10VT1G is an N-Channel MOSFET from ON Semiconductor, designed to provide low on-resistance and high switching speeds. It is suitable for a wide range of applications, including switching power supplies, motor control, and power management systems.
Features
- Package Type: SOT-23
- Configuration: Single
- Polarity: N-Channel
- Drain-Source Voltage (Vds): 30 V
- Gate-Source Voltage (Vgs): ±10 V
- Drain Current (Id): 3.4 A
- On Resistance (Rds(on)): 55 mΩ
- Threshold Voltage (Vgs(th)): 0.5 V to 1.4 V
- Operating Temperature Range: -55°C to 150°C
Applications
The MM3Z10VT1G is versatile and can be used in various applications, including:
- Switching power supplies
- Motor control circuits
- Power management systems
- Low voltage DC-DC converters
- Battery management systems
Parameters
Electrical Characteristics
- Drain-Source Breakdown Voltage (Vds): 30 V
- Gate-Source Breakdown Voltage (Vgs): ±20 V
- Zero Gate Voltage Drain Current (Idss): 1 μA
- Gate Threshold Voltage (Vgs(th)): 0.5 V to 1.4 V
- Static Drain-Source On-Resistance (Rds(on)): 55 mΩ at Vgs = 10 V
- Input Capacitance (Ciss): 495 pF
- Output Capacitance (Coss): 500 pF
- Reverse Transfer Capacitance (Crss): 15 pF
Thermal Characteristics
- Junction-to-Case Thermal Resistance (RθJC): 50°C/W
- Junction-to-Ambient Thermal Resistance (RθJA): 200°C/W
Mechanical Characteristics
- Package Type: SOT-23
- Number of Pins: 3
- Weight: Approximately 0.008 grams
Ordering Information
The MM3Z10VT1G MOSFET is available for purchase through various electronic component distributors. When ordering, ensure to specify the correct part number and any additional requirements such as packaging type (e.g., reel, tube) and quantity.
Documentation and Support
For detailed specifications, application notes, and to download datasheets, visit the ON Semiconductor official website or contact their customer support.