Description
MJE3055TG ON Semiconductor
Product Description
The MJE3055TG is a high-voltage, high-current NPN power transistor designed for use in switching applications. It features a high collector-emitter breakdown voltage, high collector current, and low saturation voltage.
Key Features
- High Collector-Emitter Breakdown Voltage: 60V
- High Collector Current: 10A
- Low Saturation Voltage: 1.5V
- High Power Dissipation: 90W
- Complementary PNP Type: MJE2955TG
Applications
- Switching regulators
- Power supplies
- Motor control
- Relay drivers
- Audio amplifiers
Package and Thermal Characteristics
- Package Type: TO-220
- Thermal Resistance, Junction to Case: 1.92°C/W
- Thermal Resistance, Junction to Ambient: 62.5°C/W
Electrical Characteristics (Ta = 25°C)
- Collector-Emitter Breakdown Voltage: 60V
- Collector-Base Breakdown Voltage: 60V
- Emitter-Base Breakdown Voltage: 5V
- Collector Current – Continuous: 10A
- Base Current: 5A
- DC Current Gain: 20-100
- Saturation Voltage: 1.5V
Switching Characteristics (Ta = 25°C)
- Turn-On Time: 2.5μs
- Turn-Off Time: 2.5μs
- Storage Time: 2.5μs
- Fall Time: 0.5μs
Maximum Ratings (Ta = 25°C)
- Collector-Emitter Voltage: 60V
- Collector-Base Voltage: 60V
- Emitter-Base Voltage: 5V
- Collector Current – Peak: 15A
- Base Current: 5A
- Power Dissipation: 90W
- Operating Temperature Range: -55 to 150°C
- Storage Temperature Range: -55 to 150°C