Description

MJD2955T4G ON

Product Description

The MJD2955T4G is a power transistor designed for high-voltage, high-current applications. It is built with a rugged TO-247 package and features a High Voltage Insulation Technology (HIPOT) for enhanced reliability.

Key Specifications

Collector-Emitter Voltage (Vceo): 600V
Collector-Base Voltage (Vcbo): 700V
Emitter-Base Voltage (Vebo): 7V
Collector Current (Ic): 40A
Base Current (Ib): 5A
Power Dissipation (Pd): 200W
Junction Temperature (Tj): -55 to 150°C
Storage Temperature (Tstg): -55 to 150°C
Package: TO-247

Thermal Characteristics

Thermal Resistance (Rthj-c): 0.5°C/W
Thermal Resistance (Rthj-a): 62.5°C/W

Electrical Characteristics

Current Gain (hfe): 20
Base-Emitter Voltage (Vbe): 1.2V
Collector-Emitter Saturation Voltage (Vce(sat)): 3V

Mechanical Characteristics

Weight: 10g
Dimensions: See package outline

Package Outline

The TO-247 package is a popular choice for power transistors due to its high heat dissipation capabilities and rugged design.

Ordering Information

To order the MJD2955T4G, please use the following part number: MJD2955T4G ON.