Description
MC74LCX08DR2G
Overview
The MC74LCX08DR2G is a low voltage, high speed CMOS logic 2-input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation while maintaining CMOS low power dissipation.
Features
- High Speed: tPD = 3.5ns (Typ) at VCC = 3.3V
- Low Power Dissipation: ICC = 4μA (Max) at TA = 25°C
- High Noise Immunity: VNIH = VNIL = 28% VCC (Min)
- Low Voltage Operation: VCC (Op) = 1.65V to 3.6V
- ESD Performance: HBM > 2000V; CDM > 1000V
Parameter
DC Characteristics
| Parameter |
Symbol |
Min |
Max |
Unit |
| High Level Input Voltage |
VIH |
– |
VCC |
V |
| Low Level Input Voltage |
VIL |
– |
0.35 * VCC |
V |
| High Level Output Voltage |
VOH |
VCC – 0.1 |
– |
V |
| Low Level Output Voltage |
VOL |
– |
0.1 |
V |
| Quiescent Supply Current |
ICC |
– |
20 |
μA |
AC Characteristics
| Parameter |
Symbol |
Min |
Max |
Unit |
| Propagation Delay |
tPD |
– |
3.5 |
ns |
| Transition Time |
tR, tF |
– |
1.5 |
ns |
Power Consumption
| Parameter |
Symbol |
Min |
Max |
Unit |
| Total Power Consumption |
PDP |
– |
40 |
μW |
| Power Down Consumption |
ICCPD |
– |
5 |
μA |
Package Characteristics
| Parameter |
Symbol |
Min |
Max |
Unit |
| Junction Temperature |
TJ |
-40 |
150 |
°C |
| Lead Temperature (10s) |
TL |
– |
260 |
°C |
Reliability Characteristics
| Parameter |
Symbol |
Min |
Max |
Unit |
| Electrostatic Discharge (ESD) |
ESD |
2000 |
– |
V |
| Latch-Up Performance |
LU |
– |
500 |
mA |
Ordering Information
Package Type
Shipping
- Tube: 98/Tube
- Tape and Reel: 2500/Reel
