MBRM110LT1G ON

Description

MBRM110LT1G ON Semiconductor Diode

Overview

The MBRM110LT1G is a rectifier diode from ON Semiconductor, designed for high-reliability applications. This device is suitable for use in a wide range of applications, including power supplies, motor control, and other high-power systems.

Key Features

  • Voltage Rating: 1100 V
  • Current Rating: 1 A
  • Package Type: TO-220AB
  • Polarity: NPN
  • Reverse Recovery Time (trr): 50 ns
  • Forward Voltage (Vf): 1.5 V
  • Reverse Leakage Current (Ir): 10 uA
  • Operating Temperature: -55°C to +175°C
  • Storage Temperature: -55°C to +200°C

Electrical Characteristics

At 25°C

  • Forward Voltage (Vf): 1.5 V
  • Reverse Current (Ir): 10 uA
  • Reverse Recovery Time (trr): 50 ns
  • Forward Surge Current (Ifsm): 20 A

At 125°C

  • Forward Voltage (Vf): 1.5 V
  • Reverse Current (Ir): 100 uA
  • Reverse Recovery Time (trr): 50 ns
  • Forward Surge Current (Ifsm): 15 A

Mechanical Characteristics

  • Package Type: TO-220AB
  • Mounting Type: Through Hole
  • Weight: 2.1 g
  • Dimensions: 10.3 x 4.5 x 15.8 mm

Reliability Features

  • ESD Protection: Yes
  • RoHS Compliant: Yes
  • Halogen Free: Yes

Applications

  • Power Supplies
  • Motor Control
  • High-Power Systems
  • Industrial Control
  • Automotive Systems

Documentation

  • [Datasheet](link to datasheet)
  • [Application Note](link to application note)